Micron Technology, Inc. Memory MT53D4DBNY-DC

Description
SDRAM - Mobile LPDDR4 Memory IC
Datasheet
Description
SDRAM - Mobile LPDDR4 Memory IC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT53D4DBNY-DC - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR4 Memory IC

SDRAM - Mobile LPDDR4 Memory IC

Buy Now
IC SDRAM LPDDR4 4G NA QDP

IC SDRAM LPDDR4 4G NA QDP

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D4DBNY-DC
Integrated Circuits (ICs) - Memory - Memory MT53D4DBNY-DC
IC SDRAM LPDDR4 4G NA QDP

IC SDRAM LPDDR4 4G NA QDP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D4DBNY-DC MT53D4DBNY-DC MT53D4DBNY-DC
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ4C1024 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 5962-8764814QYA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 250 ns
Density 512 kbits
View Details
SN74ACT2226 64 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2226DW - Texas Instruments
Specs
Memory Category FIFO
Package Type SOIC
View Details
5 suppliers
Memory IC and Storage Component - 774-HYB18L256160BC-7.5 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
View Details