Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT53D384M16D1Z1AMWC1

Description
LPDDR4 6G DIE 384MX16
  • Memory - MT53D384M16D1Z1AMWC1 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT53D384M16D1Z1AMWC1 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
LPDDR4 6G DIE 384MX16
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D384M16D1Z1AMWC1
Integrated Circuits (ICs) - Memory - Memory MT53D384M16D1Z1AMWC1
LPDDR4 6G DIE 384MX16

LPDDR4 6G DIE 384MX16

Supplier's Site
Memory - MT53D384M16D1Z1AMWC1 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT53D384M16D1Z1AMWC1
Memory MT53D384M16D1Z1AMWC1
Memory IC

Memory IC

Buy Now
Memory - MT53D384M16D1Z1AMWC1 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT53D384M16D1Z1AMWC1
Memory MT53D384M16D1Z1AMWC1
LPDDR4 6G DIE 384MX16

LPDDR4 6G DIE 384MX16

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D384M16D1Z1AMWC1 MT53D384M16D1Z1AMWC1 MT53D384M16D1Z1AMWC1
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 6116LA20TPG - Lingto Electronic Limited
Rochester Electronics
Memory
6116LA20TPG
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 16 kbits
View Details
Memory - 28276189 C - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
28276189 C
View Details
Texas Instruments
Integrated Circuits (ICs) - Memory - Memory
100142FC
Specs
Memory Category Volatile
Density 0 kbits
Package Type 4.5 ns
View Details
Memory - AS28C010 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS28C010
Specs
Memory Category EEPROM; EEPROM
Access Time 120 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details