Micron Technology, Inc. Memory MT53D384M16D1NY-046 XT ES:D

Description
SDRAM - Mobile LPDDR4 Memory IC 6Gbit 2.133 GHz
  • Memory - MT53D384M16D1NY-046 XT ES:D - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT53D384M16D1NY-046 XT ES:D - Lingto Electronic Limited
    Lingto Electronic Limited
Description
SDRAM - Mobile LPDDR4 Memory IC 6Gbit 2.133 GHz

Suppliers

Company
Product
Description
Supplier Links
Memory - MT53D384M16D1NY-046 XT ES:D - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT53D384M16D1NY-046 XT ES:D
Memory MT53D384M16D1NY-046 XT ES:D
SDRAM - Mobile LPDDR4 Memory IC 6Gbit 2.133 GHz

SDRAM - Mobile LPDDR4 Memory IC 6Gbit 2.133 GHz

Buy Now
Memory - MT53D384M16D1NY-046 XT ES:D - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT53D384M16D1NY-046 XT ES:D
Memory MT53D384M16D1NY-046 XT ES:D
LPDDR4 6G 384MX16 FBGA

LPDDR4 6G 384MX16 FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number MT53D384M16D1NY-046 XT ES:D MT53D384M16D1NY-046 XT ES:D
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
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