Micron Technology, Inc. Memory MT53D1G64D8SQ-053 WT ES:E

Description
IC DRAM 64GBIT 1866MHZ 556VFBGA
Description
IC DRAM 64GBIT 1866MHZ 556VFBGA

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IC DRAM 64GBIT 1866MHZ 556VFBGA

IC DRAM 64GBIT 1866MHZ 556VFBGA

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SDRAM - Mobile LPDDR4 Memory IC 64Gbit 1.866 GHz 556-VFBGA (12.4x12.4)

SDRAM - Mobile LPDDR4 Memory IC 64Gbit 1.866 GHz 556-VFBGA (12.4x12.4)

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Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D1G64D8SQ-053 WT ES:E
Integrated Circuits (ICs) - Memory - Memory MT53D1G64D8SQ-053 WT ES:E
IC DRAM 64GBIT 1.866GHZ 556VFBGA

IC DRAM 64GBIT 1.866GHZ 556VFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D1G64D8SQ-053 WT ES:E MT53D1G64D8SQ-053 WT ES:E MT53D1G64D8SQ-053 WT ES:E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Density 64000000 kbits 64000000 kbits 64000000 kbits
Operating Temperature -30 to 85 C (-22 to 185 F)
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