Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT53D1G64D8SQ-053 WT ES:E TR

Description
IC DRAM 64GBIT 1.866GHZ 556VFBGA
Description
IC DRAM 64GBIT 1.866GHZ 556VFBGA

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D1G64D8SQ-053 WT ES:E TR
Integrated Circuits (ICs) - Memory - Memory MT53D1G64D8SQ-053 WT ES:E TR
IC DRAM 64GBIT 1.866GHZ 556VFBGA

IC DRAM 64GBIT 1.866GHZ 556VFBGA

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 64Gbit 1.866 GHz 556-VFBGA (12.4x12.4)

SDRAM - Mobile LPDDR4 Memory IC 64Gbit 1.866 GHz 556-VFBGA (12.4x12.4)

Buy Now
IC DRAM 64GBIT 1866MHZ 556VFBGA

IC DRAM 64GBIT 1866MHZ 556VFBGA

Supplier's Site

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D1G64D8SQ-053 WT ES:E TR MT53D1G64D8SQ-053 WT ES:E TR MT53D1G64D8SQ-053 WT ES:E TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1712220 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Pins 8
Supply Voltage 3.6 v, 2.7 v
View Details
Memory - 9338PCQR - Quarktwin Technology Ltd.
Texas Instruments
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type DIP; 16-DIP (0.300\", 7.62mm)
Supply Voltage 4.75V ~ 5.25V
View Details
Memory - 16-3791-01-T - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Dual Memory IC and Storage Component - 774-MT5C1008DCJ-45/IT - ERSAELECTRONICS PTE. LTD.
Specs
Operating Temperature -40 C (-40 F)
Density 1000 kbits
Address Bus Width 17 bits
View Details
2 suppliers