Micron Technology, Inc. Memory MT53D1G64D8NZ-046 WT:E TR

Description
SDRAM - Mobile LPDDR4 Memory IC 64Gbit 2.133 GHz 376-WFBGA (14x14)
Description
SDRAM - Mobile LPDDR4 Memory IC 64Gbit 2.133 GHz 376-WFBGA (14x14)

Suppliers

Company
Product
Description
Supplier Links
SDRAM - Mobile LPDDR4 Memory IC 64Gbit 2.133 GHz 376-WFBGA (14x14)

SDRAM - Mobile LPDDR4 Memory IC 64Gbit 2.133 GHz 376-WFBGA (14x14)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT53D1G64D8NZ-046 WT:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D1G64D8NZ-046 WT:E TR
Integrated Circuits (ICs) - Memory - Memory MT53D1G64D8NZ-046 WT:E TR
IC DRAM 64GBIT 2.133GHZ 376WFBGA

IC DRAM 64GBIT 2.133GHZ 376WFBGA

Supplier's Site
IC DRAM 64GBIT 2133MHZ 376WFBGA

IC DRAM 64GBIT 2133MHZ 376WFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D1G64D8NZ-046 WT:E TR MT53D1G64D8NZ-046 WT:E TR MT53D1G64D8NZ-046 WT:E TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 6116LA45SOGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 45 ns
Density 16 kbits
View Details
Memory - 9338PCQR - Quarktwin Technology Ltd.
Texas Instruments
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type DIP; 16-DIP (0.300\", 7.62mm)
Supply Voltage 4.75V ~ 5.25V
View Details
Memory - AS4DDR232M72A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR2
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 256000 kbits
View Details