Micron Technology, Inc. Memory MT53D1024M64D8NW-053 WT:D

Description
IC DRAM 64GBIT 1866MHZ 432VFBGA
Description
IC DRAM 64GBIT 1866MHZ 432VFBGA

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IC DRAM 64GBIT 1866MHZ 432VFBGA

IC DRAM 64GBIT 1866MHZ 432VFBGA

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SDRAM - Mobile LPDDR4 Memory IC 64Gbit 1.866 GHz 432-VFBGA (15x15)

SDRAM - Mobile LPDDR4 Memory IC 64Gbit 1.866 GHz 432-VFBGA (15x15)

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Integrated Circuits (ICs) - Memory - Memory - MT53D1024M64D8NW-053 WT:D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53D1024M64D8NW-053 WT:D
Integrated Circuits (ICs) - Memory - Memory MT53D1024M64D8NW-053 WT:D
IC DRAM 64GBIT 1.866GHZ 432VFBGA

IC DRAM 64GBIT 1.866GHZ 432VFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53D1024M64D8NW-053 WT:D MT53D1024M64D8NW-053 WT:D MT53D1024M64D8NW-053 WT:D
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Density 64000000 kbits 64000000 kbits 64000000 kbits
Operating Temperature -30 to 85 C (-22 to 185 F)
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