Micron Technology, Inc. Memory MT53B512M64D4TX-053 WT ES:C

Description
SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.866 GHz
  • Memory - MT53B512M64D4TX-053 WT ES:C - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT53B512M64D4TX-053 WT ES:C - Lingto Electronic Limited
    Lingto Electronic Limited
Description
SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.866 GHz

Suppliers

Company
Product
Description
Supplier Links
Memory - MT53B512M64D4TX-053 WT ES:C - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT53B512M64D4TX-053 WT ES:C
Memory MT53B512M64D4TX-053 WT ES:C
SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.866 GHz

SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.866 GHz

Buy Now
Memory - MT53B512M64D4TX-053 WT ES:C - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT53B512M64D4TX-053 WT ES:C
Memory MT53B512M64D4TX-053 WT ES:C
IC DRAM 32GBIT 1866MHZ FBGA

IC DRAM 32GBIT 1866MHZ FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number MT53B512M64D4TX-053 WT ES:C MT53B512M64D4TX-053 WT ES:C
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 1882660P - RS Components, Ltd.
RS Components, Ltd.
SDRAM
1882660P
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 512000 kbits
View Details
Memory - NM93C46TEM8 - 258458-NM93C46TEM8 - Win Source Electronics
Texas Instruments
Memory - NM93C46TEM8
NM93C46TEM8
View Details
Memory - SMJ27C010A - Micross Components, Inc.
Micross Components, Inc.
Memory
SMJ27C010A
Specs
Memory Category EPROM; UVEPROM
Access Time 41263 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 71124S15Y - Lingto Electronic Limited
Rochester Electronics
Memory
71124S15Y
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Density 1000 kbits
View Details