Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT53B512M32D2NP-062 WT ES:D TR

Description
IC DRAM 16GBIT 1.6GHZ 200WFBGA
Description
IC DRAM 16GBIT 1.6GHZ 200WFBGA

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - MT53B512M32D2NP-062 WT ES:D TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53B512M32D2NP-062 WT ES:D TR
Integrated Circuits (ICs) - Memory - Memory MT53B512M32D2NP-062 WT ES:D TR
IC DRAM 16GBIT 1.6GHZ 200WFBGA

IC DRAM 16GBIT 1.6GHZ 200WFBGA

Supplier's Site
IC DRAM 16GBIT 1600MHZ 200WFBGA

IC DRAM 16GBIT 1600MHZ 200WFBGA

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 16Gbit 1.6 GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 16Gbit 1.6 GHz 200-WFBGA (10x14.5)

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53B512M32D2NP-062 WT ES:D TR MT53B512M32D2NP-062 WT ES:D TR MT53B512M32D2NP-062 WT ES:D TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 27LS00A/BEA - Quarktwin Technology Ltd.
Rochester Electronics
View Details
2 suppliers
TEXAS INSTRUMENTS CC2510F16RSP IC, TRX, 2.4GHZ, 16K FLASH, QFN36 - 815-CC2510F16RSP - Utmel Electronic Limited
Specs
Memory Category Flash
Logic Family CMOS
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
Memory - 00002331896 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
Memory - AS29LV016D - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 70 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details