Micron Technology, Inc. Memory MT53B512M32D2NP-062 AIT:C TR

Description
IC DRAM 16GBIT 1600MHZ 200WFBGA
Description
IC DRAM 16GBIT 1600MHZ 200WFBGA

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IC DRAM 16GBIT 1600MHZ 200WFBGA

IC DRAM 16GBIT 1600MHZ 200WFBGA

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SDRAM - Mobile LPDDR4 Memory IC 16Gbit 1.6 GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 16Gbit 1.6 GHz 200-WFBGA (10x14.5)

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Integrated Circuits (ICs) - Memory - Memory - MT53B512M32D2NP-062 AIT:C TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53B512M32D2NP-062 AIT:C TR
Integrated Circuits (ICs) - Memory - Memory MT53B512M32D2NP-062 AIT:C TR
IC DRAM 16GBIT 1.6GHZ 200WFBGA

IC DRAM 16GBIT 1.6GHZ 200WFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53B512M32D2NP-062 AIT:C TR MT53B512M32D2NP-062 AIT:C TR MT53B512M32D2NP-062 AIT:C TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Density 16000000 kbits 16000000 kbits 16000000 kbits
Operating Temperature -40 to 95 C (-40 to 203 F)
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