Micron Technology, Inc. Memory MT53B512M32D2GZ-062 WT ES:B TR

Description
IC DRAM 16GBIT 1600MHZ 200WFBGA
Description
IC DRAM 16GBIT 1600MHZ 200WFBGA

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Company
Product
Description
Supplier Links
IC DRAM 16GBIT 1600MHZ 200WFBGA

IC DRAM 16GBIT 1600MHZ 200WFBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT53B512M32D2GZ-062 WT ES:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53B512M32D2GZ-062 WT ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT53B512M32D2GZ-062 WT ES:B TR
IC DRAM 16GBIT 1.6GHZ 200WFBGA

IC DRAM 16GBIT 1.6GHZ 200WFBGA

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 16Gbit 1.6 GHz 200-WFBGA (11x14.5)

SDRAM - Mobile LPDDR4 Memory IC 16Gbit 1.6 GHz 200-WFBGA (11x14.5)

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Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53B512M32D2GZ-062 WT ES:B TR MT53B512M32D2GZ-062 WT ES:B TR MT53B512M32D2GZ-062 WT ES:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Density 16000000 kbits 16000000 kbits 16000000 kbits
Data Rate 1600 MHz
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