Micron Technology, Inc. Memory MT53B512M16D1Z11MWC1

Description
LPDDR4 8G DIE 512MX16
Datasheet
Description
LPDDR4 8G DIE 512MX16
Datasheet

Suppliers

Company
Product
Description
Supplier Links
LPDDR4 8G DIE 512MX16

LPDDR4 8G DIE 512MX16

Supplier's Site Datasheet
Memory - MT53B512M16D1Z11MWC1 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC

Memory IC

Buy Now
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53B512M16D1Z11MWC1
Integrated Circuits (ICs) - Memory - Memory MT53B512M16D1Z11MWC1
LPDDR4 8G DIE 512MX16

LPDDR4 8G DIE 512MX16

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53B512M16D1Z11MWC1 MT53B512M16D1Z11MWC1 MT53B512M16D1Z11MWC1
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 71016S20Y - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 1000 kbits
View Details
Memory - 586228-001-00 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - RAM - AS27C256-20JM - 1212176-AS27C256-20JM - Win Source Electronics
Specs
Memory Category SRAM Chip
Access Time 200 ns
Operating Temperature -55 C (-67 F)
View Details
2 suppliers
FIFOs Memory - MPD23698RHA - Quarktwin Technology Ltd.
View Details
2 suppliers