Micron Technology, Inc. Memory MT53B4DCNY-DC

Description
SDRAM - Mobile LPDDR4 Memory IC
Datasheet
Description
SDRAM - Mobile LPDDR4 Memory IC
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT53B4DCNY-DC - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR4 Memory IC

SDRAM - Mobile LPDDR4 Memory IC

Buy Now
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53B4DCNY-DC
Integrated Circuits (ICs) - Memory - Memory MT53B4DCNY-DC
SPECIAL/CUSTOM LPDDR4

SPECIAL/CUSTOM LPDDR4

Supplier's Site
SPECIAL/CUSTOM LPDDR4

SPECIAL/CUSTOM LPDDR4

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53B4DCNY-DC MT53B4DCNY-DC MT53B4DCNY-DC
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 04188CBLBB-30 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 1.8 ns
Density 8000 kbits
View Details
Memory - 51-32598Z01-A - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - AS5C1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 to 70 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details