Micron Technology, Inc. Memory MT53B4DCNQ-DC

Description
IC DRAM SPECIAL/CUSTOM 200VFBGA
Datasheet
Description
IC DRAM SPECIAL/CUSTOM 200VFBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM SPECIAL/CUSTOM 200VFBGA

IC DRAM SPECIAL/CUSTOM 200VFBGA

Supplier's Site Datasheet
Memory - MT53B4DCNQ-DC - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPDDR4 Memory IC 200-VFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 200-VFBGA (10x14.5)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT53B4DCNQ-DC - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53B4DCNQ-DC
Integrated Circuits (ICs) - Memory - Memory MT53B4DCNQ-DC
IC DRAM SPECIAL/CUSTOM 200VFBGA

IC DRAM SPECIAL/CUSTOM 200VFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53B4DCNQ-DC MT53B4DCNQ-DC MT53B4DCNQ-DC
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1712234P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 64000 kbits
Package Type SOIC; SOIC
View Details
SN54ACT3632 512 x 36 x 2 Synchronous Bidirectional FIFO Memory - SN54ACT3632HFP - Texas Instruments
Specs
Memory Category FIFO
Package Type CFP
View Details
4 suppliers
Memory - AS4C1259 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 100 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 27C256-25I/L268 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 250 ns
Density 256 kbits
View Details