Micron Technology, Inc. Memory MT53B384M64D4NH-062 WT:B

Description
IC DRAM 24GBIT 1600MHZ 272WFBGA
Description
IC DRAM 24GBIT 1600MHZ 272WFBGA

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 24GBIT 1600MHZ 272WFBGA

IC DRAM 24GBIT 1600MHZ 272WFBGA

Supplier's Site
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53B384M64D4NH-062 WT:B
Integrated Circuits (ICs) - Memory - Memory MT53B384M64D4NH-062 WT:B
IC DRAM 24GBIT 1.6GHZ 272WFBGA

IC DRAM 24GBIT 1.6GHZ 272WFBGA

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 24Gbit 1.6 GHz 272-WFBGA (15x15)

SDRAM - Mobile LPDDR4 Memory IC 24Gbit 1.6 GHz 272-WFBGA (15x15)

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53B384M64D4NH-062 WT:B MT53B384M64D4NH-062 WT:B MT53B384M64D4NH-062 WT:B
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Density 24000000 kbits 24000000 kbits 24000000 kbits
Data Rate 1600 MHz
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 24LC16T-I/SL - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3.50E6 ns
Density 16 kbits
View Details
Memory - 520966231076 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
 - NM27C040Q170 - Rochester Electronics
Specs
Memory Category PROM
Package Type DIP; CDIP32
View Details
3 suppliers
Memory - AS58LC1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details