Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT53B384M64D4EZ-062 WT ES:B TR

Description
IC DRAM 24GBIT 1.6GHZ FBGA
Description
IC DRAM 24GBIT 1.6GHZ FBGA

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53B384M64D4EZ-062 WT ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT53B384M64D4EZ-062 WT ES:B TR
IC DRAM 24GBIT 1.6GHZ FBGA

IC DRAM 24GBIT 1.6GHZ FBGA

Supplier's Site
IC DRAM 24GBIT 1600MHZ FBGA

IC DRAM 24GBIT 1600MHZ FBGA

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 24Gbit 1.6 GHz

SDRAM - Mobile LPDDR4 Memory IC 24Gbit 1.6 GHz

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53B384M64D4EZ-062 WT ES:B TR MT53B384M64D4EZ-062 WT ES:B TR MT53B384M64D4EZ-062 WT ES:B TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8F512K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 70 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
SN74ACT2227 64 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2227DWR - Texas Instruments
Specs
Memory Category FIFO
Package Type SOIC
View Details
6 suppliers
Memory - 27C512-15/LP - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 150 ns
Density 512 kbits
View Details
Memory - 3354733 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details