Micron Technology, Inc. Memory MT53B384M16D1Z0AQWC1

Description
IC SDRAM 6GBIT DIE
  • Memory - MT53B384M16D1Z0AQWC1 - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT53B384M16D1Z0AQWC1 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC SDRAM 6GBIT DIE
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT53B384M16D1Z0AQWC1 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT53B384M16D1Z0AQWC1
Memory MT53B384M16D1Z0AQWC1
IC SDRAM 6GBIT DIE

IC SDRAM 6GBIT DIE

Supplier's Site Datasheet
Memory - MT53B384M16D1Z0AQWC1 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT53B384M16D1Z0AQWC1
Memory MT53B384M16D1Z0AQWC1
SDRAM - Mobile LPDDR4 Memory IC 6Gbit

SDRAM - Mobile LPDDR4 Memory IC 6Gbit

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT53B384M16D1Z0AQWC1 MT53B384M16D1Z0AQWC1
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 24C04AE/P - Lingto Electronic Limited
Rochester Electronics
Memory
24C04AE/P
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 4 kbits
View Details
Memory - AS4SD8M16 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS4SD8M16
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 64000 kbits
View Details
Memory - S29GL032N11TFIV10 - Quarktwin Technology Ltd.
Texas Instruments
Memory
S29GL032N11TFIV10
Specs
Memory Category Flash; FLASH
Access Time 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
Flash Memory - 1882567 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882567
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details