Micron Technology, Inc. Memory MT53B2DANW-DC

Description
SPECIAL/CUSTOM LPDDR4
  • Memory - MT53B2DANW-DC - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT53B2DANW-DC - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
SPECIAL/CUSTOM LPDDR4
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT53B2DANW-DC - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT53B2DANW-DC
Memory MT53B2DANW-DC
SPECIAL/CUSTOM LPDDR4

SPECIAL/CUSTOM LPDDR4

Supplier's Site Datasheet
Memory - MT53B2DANW-DC - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT53B2DANW-DC
Memory MT53B2DANW-DC
SDRAM - Mobile LPDDR4 Memory IC

SDRAM - Mobile LPDDR4 Memory IC

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT53B2DANW-DC MT53B2DANW-DC
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962-88735013A - Lingto Electronic Limited
Rochester Electronics
Memory
5962-88735013A
Specs
Memory Category EPROM; EPROM
Access Time 45 ns
Density 16 kbits
View Details
Integrated Circuits (ICs) - Memory - Memory - JM38510/23113BFA - Acme Chip Technology Co., Limited
Texas Instruments
Integrated Circuits (ICs) - Memory - Memory
JM38510/23113BFA
View Details
2 suppliers
256K X 16 FAST PAGE DRAM, 50 ns, PDSO40 - HYB514171BJ-50 - Karl Kruse GmbH & Co. KG
Infineon Technologies AG
256K X 16 FAST PAGE DRAM, 50 ns, PDSO40
HYB514171BJ-50
Specs
Memory Category DRAM Chip
Package Type PDSO40
View Details
Memory - AS8F512K32 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8F512K32
Specs
Memory Category FLASH
Access Time 70 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details