Micron Technology, Inc. Memory MT53B256M64D2NV MS

Description
SDRAM - Mobile LPDDR4 Memory IC 16Gbit
  • Memory - MT53B256M64D2NV MS - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT53B256M64D2NV MS - Lingto Electronic Limited
    Lingto Electronic Limited
Description
SDRAM - Mobile LPDDR4 Memory IC 16Gbit

Suppliers

Company
Product
Description
Supplier Links
Memory - MT53B256M64D2NV MS - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT53B256M64D2NV MS
Memory MT53B256M64D2NV MS
SDRAM - Mobile LPDDR4 Memory IC 16Gbit

SDRAM - Mobile LPDDR4 Memory IC 16Gbit

Buy Now
Memory - MT53B256M64D2NV MS - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT53B256M64D2NV MS
Memory MT53B256M64D2NV MS
IC DRAM 16GBIT FBGA

IC DRAM 16GBIT FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number MT53B256M64D2NV MS MT53B256M64D2NV MS
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 54F189FLQB - Lingto Electronic Limited
Rochester Electronics
Memory
54F189FLQB
View Details
Memory - SMJ416400 - Micross Components, Inc.
Micross Components, Inc.
Memory
SMJ416400
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 100 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
CD74HCT40105 High Speed CMOS Logic 4-Bit by 16-Word FIFO Register - CD74HCT40105M96G4 - Texas Instruments
Texas Instruments
CD74HCT40105 High Speed CMOS Logic 4-Bit by 16-Word FIFO Register
CD74HCT40105M96G4
Specs
Memory Category FIFO
View Details
3 suppliers
SDRAM - 1882600 - RS Components, Ltd.
RS Components, Ltd.
SDRAM
1882600
Specs
Memory Category DRAM Chip
Access Time 5 ns
Bits per Word 8 bits
View Details