Micron Technology, Inc. Memory MT53B256M32D1NP-062 AAT:C TR

Description
SDRAM - Mobile LPDDR4 Memory IC 8Gbit 1.6 GHz 200-WFBGA (10x14.5)
Description
SDRAM - Mobile LPDDR4 Memory IC 8Gbit 1.6 GHz 200-WFBGA (10x14.5)

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SDRAM - Mobile LPDDR4 Memory IC 8Gbit 1.6 GHz 200-WFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 8Gbit 1.6 GHz 200-WFBGA (10x14.5)

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IC DRAM 8GBIT 1600MHZ 200WFBGA

IC DRAM 8GBIT 1600MHZ 200WFBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT53B256M32D1NP-062 AAT:C TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53B256M32D1NP-062 AAT:C TR
Integrated Circuits (ICs) - Memory - Memory MT53B256M32D1NP-062 AAT:C TR
IC DRAM 8GBIT 1.6GHZ 200WFBGA

IC DRAM 8GBIT 1.6GHZ 200WFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53B256M32D1NP-062 AAT:C TR MT53B256M32D1NP-062 AAT:C TR MT53B256M32D1NP-062 AAT:C TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature -40 to 105 C (-40 to 221 F)
Density 8000000 kbits 8000000 kbits 8000000 kbits
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