Micron Technology, Inc. Memory MT53B256M32D1GZ-062 WT:B

Description
IC DRAM 8GBIT 1600MHZ 200WFBGA
Description
IC DRAM 8GBIT 1600MHZ 200WFBGA

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IC DRAM 8GBIT 1600MHZ 200WFBGA

IC DRAM 8GBIT 1600MHZ 200WFBGA

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SDRAM - Mobile LPDDR4 Memory IC 8Gbit 1.6 GHz 200-WFBGA (11x14.5)

SDRAM - Mobile LPDDR4 Memory IC 8Gbit 1.6 GHz 200-WFBGA (11x14.5)

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Integrated Circuits (ICs) - Memory - Memory - MT53B256M32D1GZ-062 WT:B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53B256M32D1GZ-062 WT:B
Integrated Circuits (ICs) - Memory - Memory MT53B256M32D1GZ-062 WT:B
IC DRAM 8GBIT 1.6GHZ 200WFBGA

IC DRAM 8GBIT 1.6GHZ 200WFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53B256M32D1GZ-062 WT:B MT53B256M32D1GZ-062 WT:B MT53B256M32D1GZ-062 WT:B
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Density 8000000 kbits 8000000 kbits 8000000 kbits
Operating Temperature -30 to 85 C (-22 to 185 F)
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