Micron Technology, Inc. Memory MT53B256M16D1Z00MWC1

Description
LPDDR4 4G DIE 256MX16
Datasheet
Description
LPDDR4 4G DIE 256MX16
Datasheet

Suppliers

Company
Product
Description
Supplier Links
LPDDR4 4G DIE 256MX16

LPDDR4 4G DIE 256MX16

Supplier's Site Datasheet
Memory - MT53B256M16D1Z00MWC1 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory IC

Memory IC

Buy Now
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53B256M16D1Z00MWC1
Integrated Circuits (ICs) - Memory - Memory MT53B256M16D1Z00MWC1
LPDDR4 4G DIE 256MX16

LPDDR4 4G DIE 256MX16

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53B256M16D1Z00MWC1 MT53B256M16D1Z00MWC1 MT53B256M16D1Z00MWC1
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962-8993502ZA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 35 ns
Density 256 kbits
View Details
Flash Memory - 1882682P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type TSOP
Pins 48
View Details
Memory - AS58LC1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 16-2948-02-T - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers