Micron Technology, Inc. Memory MT53B1G32D4NQ-062 WT:D

Description
LPDDR4 32G 1GX32 FBGA QDP
  • Memory - MT53B1G32D4NQ-062 WT:D - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT53B1G32D4NQ-062 WT:D - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
LPDDR4 32G 1GX32 FBGA QDP

Suppliers

Company
Product
Description
Supplier Links
Memory - MT53B1G32D4NQ-062 WT:D - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT53B1G32D4NQ-062 WT:D
Memory MT53B1G32D4NQ-062 WT:D
LPDDR4 32G 1GX32 FBGA QDP

LPDDR4 32G 1GX32 FBGA QDP

Supplier's Site
Memory - MT53B1G32D4NQ-062 WT:D - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT53B1G32D4NQ-062 WT:D
Memory MT53B1G32D4NQ-062 WT:D
SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.6 GHz

SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.6 GHz

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT53B1G32D4NQ-062 WT:D MT53B1G32D4NQ-062 WT:D
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MYXxxSMS01GP32xxx-45/x - Micross Components, Inc.
Micross Components, Inc.
Memory
MYXxxSMS01GP32xxx-45/x
Specs
Memory Category MRAM; STT-MRAM
Access Time 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory IC and Storage Component - 736-DP84T22V-25 - ERSAELECTRONICS PTE. LTD.
Texas Instruments
Memory IC and Storage Component
DP84T22V-25
Specs
Operating Temperature 0 C (32 F)
View Details
3 suppliers
Infineon Technologies AG
Integrated Circuits (ICs) - Memory - Memory
40060427
View Details
Memory - 043641RLAD-7 - Lingto Electronic Limited
Rochester Electronics
Memory
043641RLAD-7
Specs
Memory Category SRAM; SRAM Chip
Access Time 3.5 ns
Density 4500 kbits
View Details