Manufacturer: Micron Technology Inc.
Series: Automotive, AEC-Q100
Operating Temperature Range: -40°C ~ 105°C (TC)
Features: SDRAM - Mobile LPDDR4 Memory IC 4Gb (128M x 32) - 1.6 GHz 200-WFBGA (10x14.5)
Package: Tray
Package: 200-WFBGA
Mounting: Surface Mount
Part Status: Obsolete
Family Name: MT53B128
Categories: Integrated Circuits (ICs)
Case / Package: 200-WFBGA (10x14.5)
ECCN: EAR99
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
Quantity per package: 1360
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0036
IC DRAM 4GBIT 1.6GHZ 200WFBGA Product overview: MT53B128M32D1DS-062 AAT:A from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1.6GHZ. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, 1.6GHZ, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT53B128M32D1DS-
IC DRAM 4GBIT 1600MHZ 200WFBGA
SDRAM - Mobile LPDDR4 Memory IC 4Gbit 1.6 GHz 200-WFBGA (10x14.5)
DRAM, 128M X 32BIT, -40 TO 105DEG C; DRAM Type:LPDDR4; DRAM Density:4Gbit; DRAM Memory Configuration:128M x 32bit; Clock Frequency:-; Memory Case Style:WFBGA; No. of Pins:200Pins; Supply Voltage Nom:-; Access Time:-; Product Range:- RoHS Compliant: Yes
IC DRAM 4GBIT 1.6GHZ 200WFBGA
IC DRAM 4GBIT 1.6GHZ 200WFBGA
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Lingto Electronic Limited | Quarktwin Technology Ltd. | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT53B128M32D1DS-062 AAT:A | MT53B128M32D1DS-062 AAT:A | MT53B128M32D1DS-062 AAT:A | 80AH8194 | MT53B128M32D1DS-062 AAT:A | MT53B128M32D1DS-062 AAT:A | |
| Product Name | Memory - SDRAM - MT53B128M32D1DS-062 AAT:A | 1.6GHZ Memory IC and Storage Component | Memory | Memory | Dram, 128M X 32Bit, -40 To 105Deg C; Dram Type Micron | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | SDRAM - Mobile LPDDR4; DRAM Chip |
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | |||
| Package Type | BGA; 200-WFBGA (10x14.5) | BGA; Tray | BGA; 200-WFBGA | WFBGA | BGA | 200-WFBGA | |
| Supply Voltage | 1.1V | 1.1V | -40degC ~ 105degC (TC) | 1.1V |
