Micron Technology, Inc. Memory MT53B1024M32D4NQ-062 WT:C TR

Description
IC DRAM 32GBIT 1600MHZ 200VFBGA
Description
IC DRAM 32GBIT 1600MHZ 200VFBGA

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Description
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IC DRAM 32GBIT 1600MHZ 200VFBGA

IC DRAM 32GBIT 1600MHZ 200VFBGA

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SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.6 GHz 200-VFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.6 GHz 200-VFBGA (10x14.5)

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Integrated Circuits (ICs) - Memory - Memory - MT53B1024M32D4NQ-062 WT:C TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53B1024M32D4NQ-062 WT:C TR
Integrated Circuits (ICs) - Memory - Memory MT53B1024M32D4NQ-062 WT:C TR
IC DRAM 32GBIT 1.6GHZ 200VFBGA

IC DRAM 32GBIT 1.6GHZ 200VFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53B1024M32D4NQ-062 WT:C TR MT53B1024M32D4NQ-062 WT:C TR MT53B1024M32D4NQ-062 WT:C TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Density 32000000 kbits 32000000 kbits 32000000 kbits
Operating Temperature -30 to 85 C (-22 to 185 F)
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