Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT53B1024M32D4NQ-053 WT:C TR

Description
IC DRAM 32GBIT 1.866GHZ 200VFBGA
Description
IC DRAM 32GBIT 1.866GHZ 200VFBGA

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - MT53B1024M32D4NQ-053 WT:C TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT53B1024M32D4NQ-053 WT:C TR
Integrated Circuits (ICs) - Memory - Memory MT53B1024M32D4NQ-053 WT:C TR
IC DRAM 32GBIT 1.866GHZ 200VFBGA

IC DRAM 32GBIT 1.866GHZ 200VFBGA

Supplier's Site
SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.866 GHz 200-VFBGA (10x14.5)

SDRAM - Mobile LPDDR4 Memory IC 32Gbit 1.866 GHz 200-VFBGA (10x14.5)

Buy Now
IC DRAM 32GBIT 1866MHZ 200VFBGA

IC DRAM 32GBIT 1866MHZ 200VFBGA

Supplier's Site

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT53B1024M32D4NQ-053 WT:C TR MT53B1024M32D4NQ-053 WT:C TR MT53B1024M32D4NQ-053 WT:C TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882635 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - SMJ27C010A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EPROM; UVEPROM
Access Time 41263 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 24C02A-E/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 2 kbits
View Details