Micron Technology, Inc. Memory MT52L512M64D4PQ-107 WT:B TR

Description
IC DRAM 32GBIT 933MHZ 253VFBGA
Description
IC DRAM 32GBIT 933MHZ 253VFBGA

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IC DRAM 32GBIT 933MHZ 253VFBGA

IC DRAM 32GBIT 933MHZ 253VFBGA

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SDRAM - Mobile LPDDR3 Memory IC 32Gbit 933 MHz 253-VFBGA (11x11.5)

SDRAM - Mobile LPDDR3 Memory IC 32Gbit 933 MHz 253-VFBGA (11x11.5)

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Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT52L512M64D4PQ-107 WT:B TR
Integrated Circuits (ICs) - Memory - Memory MT52L512M64D4PQ-107 WT:B TR
IC DRAM 32GBIT 933MHZ 253VFBGA

IC DRAM 32GBIT 933MHZ 253VFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT52L512M64D4PQ-107 WT:B TR MT52L512M64D4PQ-107 WT:B TR MT52L512M64D4PQ-107 WT:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Density 32000000 kbits 32000000 kbits 32000000 kbits
Operating Temperature -30 to 85 C (-22 to 185 F)
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