Micron Technology, Inc. Memory MT4A2G8NRE-83E:B

Description
IC SDRAM 16GB DDR4 FBGA
  • Memory - MT4A2G8NRE-83E:B - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT4A2G8NRE-83E:B - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Integrated Circuits (ICs) - Memory - MT4A2G8NRE-83E:B - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Datasheet
Description
IC SDRAM 16GB DDR4 FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT4A2G8NRE-83E:B - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT4A2G8NRE-83E:B
Memory MT4A2G8NRE-83E:B
IC SDRAM 16GB DDR4 FBGA

IC SDRAM 16GB DDR4 FBGA

Supplier's Site Datasheet
Memory - MT4A2G8NRE-83E:B - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT4A2G8NRE-83E:B
Memory MT4A2G8NRE-83E:B
Memory IC

Memory IC

Buy Now
Integrated Circuits (ICs) - Memory - MT4A2G8NRE-83E:B - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
MT4A2G8NRE-83E:B
Integrated Circuits (ICs) - Memory MT4A2G8NRE-83E:B
IC SDRAM 16GB DDR4 FBGA

IC SDRAM 16GB DDR4 FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT4A2G8NRE-83E:B MT4A2G8NRE-83E:B MT4A2G8NRE-83E:B
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420769 - RS Components, Ltd.
RS Components, Ltd.
SDRAM
2420769
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
Memory - MT5C1009 - Micross Components, Inc.
Micross Components, Inc.
Memory
MT5C1009
Specs
Memory Category SRAM; SRAM Chip
Access Time 12 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F1120101VXA - 5962F1120101VXA - Infineon Technologies AG
Infineon Technologies AG
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F1120101VXA
5962F1120101VXA
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 72000 kbits
Number of Words 2 k
View Details
Memory - 5962-8961415QXA - Lingto Electronic Limited
Rochester Electronics
Memory
5962-8961415QXA
Specs
Memory Category EPROM; EPROM
Access Time 45 ns
Density 1000 kbits
View Details