Micron Technology, Inc. Memory MT4A2G8NRE-83E:B TR

Description
Memory IC
  • Memory - MT4A2G8NRE-83E:B TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT4A2G8NRE-83E:B TR - Lingto Electronic Limited
    Lingto Electronic Limited
  • Integrated Circuits (ICs) - Memory - MT4A2G8NRE-83E:B TR - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Description
Memory IC

Suppliers

Company
Product
Description
Supplier Links
Memory - MT4A2G8NRE-83E:B TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT4A2G8NRE-83E:B TR
Memory MT4A2G8NRE-83E:B TR
Memory IC

Memory IC

Buy Now
Memory - MT4A2G8NRE-83E:B TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT4A2G8NRE-83E:B TR
Memory MT4A2G8NRE-83E:B TR
IC SDRAM 16GB DDR4 FBGA

IC SDRAM 16GB DDR4 FBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - MT4A2G8NRE-83E:B TR - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
MT4A2G8NRE-83E:B TR
Integrated Circuits (ICs) - Memory MT4A2G8NRE-83E:B TR
IC SDRAM 16GB DDR4 FBGA

IC SDRAM 16GB DDR4 FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT4A2G8NRE-83E:B TR MT4A2G8NRE-83E:B TR MT4A2G8NRE-83E:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 27C512-12/L092 - Lingto Electronic Limited
Rochester Electronics
Memory
27C512-12/L092
Specs
Memory Category EPROM; EPROM
Access Time 120 ns
Density 512 kbits
View Details
SN54ACT3632 512 x 36 x 2 Synchronous Bidirectional FIFO Memory - SN54ACT3632HFP - Texas Instruments
Texas Instruments
SN54ACT3632 512 x 36 x 2 Synchronous Bidirectional FIFO Memory
SN54ACT3632HFP
Specs
Memory Category FIFO
Package Type CFP
View Details
4 suppliers
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F1120201VXA - 5962F1120201VXA - Infineon Technologies AG
Infineon Technologies AG
Memories - Radiation hardened and high-reliability memories - Space Memories - 5962F1120201VXA
5962F1120201VXA
Specs
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 72000 kbits
Number of Words 2 k
View Details
Memory - AS5LC1008 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS5LC1008
Specs
Memory Category SRAM; SRAM Chip
Access Time 10 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details