Micron Technology, Inc. Memory MT49H8M36SJ-5:B

Description
DRAM Memory IC 288Mb (8M x 36) Parallel 200MHz 20ns 144-FBGA (18.5x11)
Request a Quote Datasheet
Description
DRAM Memory IC 288Mb (8M x 36) Parallel 200MHz 20ns 144-FBGA (18.5x11)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT49H8M36SJ-5:B-ND - DigiKey
Thief River Falls, MN, United States
DRAM Memory IC 288Mb (8M x 36) Parallel 200MHz 20ns 144-FBGA (18.5x11)

DRAM Memory IC 288Mb (8M x 36) Parallel 200MHz 20ns 144-FBGA (18.5x11)

Buy Now Datasheet
IC DRAM 288MBIT PARALLEL 144FBGA

IC DRAM 288MBIT PARALLEL 144FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT49H8M36SJ-5:B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT49H8M36SJ-5:B
Integrated Circuits (ICs) - Memory - Memory MT49H8M36SJ-5:B
IC DRAM 288MBIT PARALLEL 144FBGA

IC DRAM 288MBIT PARALLEL 144FBGA

Supplier's Site
Memory - MT49H8M36SJ-5:B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
DRAM Memory IC 288Mbit Parallel 200 MHz 20 ns 144-FBGA (18.5x11)

DRAM Memory IC 288Mbit Parallel 200 MHz 20 ns 144-FBGA (18.5x11)

Buy Now Datasheet

Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT49H8M36SJ-5:B-ND MT49H8M36SJ-5:B MT49H8M36SJ-5:B MT49H8M36SJ-5:B
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
Density 288000 kbits 288000 kbits 288000 kbits 288000 kbits
Package Type 144-TFBGA BGA BGA; 144-TFBGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ416400 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 100 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 40060108-001 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - 27C512-12/L093 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 120 ns
Density 512 kbits
View Details
Memory IC and Storage Component - 736-DP8429D-MSP - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type Bulk
View Details
3 suppliers