Micron Technology, Inc. Memory MT49H8M36SJ-25E:B TR

Description
DRAM Memory IC 288Mb (8M x 36) Parallel 400MHz 15ns 144-FBGA (18.5x11)
Request a Quote Datasheet
Description
DRAM Memory IC 288Mb (8M x 36) Parallel 400MHz 15ns 144-FBGA (18.5x11)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT49H8M36SJ-25E:BTR-ND - DigiKey
Thief River Falls, MN, United States
DRAM Memory IC 288Mb (8M x 36) Parallel 400MHz 15ns 144-FBGA (18.5x11)

DRAM Memory IC 288Mb (8M x 36) Parallel 400MHz 15ns 144-FBGA (18.5x11)

Buy Now Datasheet
Memory - MT49H8M36SJ-25E:B TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
DRAM Memory IC 288Mbit Parallel 400 MHz 15 ns 144-FBGA (18.5x11)

DRAM Memory IC 288Mbit Parallel 400 MHz 15 ns 144-FBGA (18.5x11)

Buy Now Datasheet
IC DRAM 288MBIT PARALLEL 144FBGA

IC DRAM 288MBIT PARALLEL 144FBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT49H8M36SJ-25E:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT49H8M36SJ-25E:B TR
Integrated Circuits (ICs) - Memory - Memory MT49H8M36SJ-25E:B TR
IC DRAM 288MBIT PARALLEL 144FBGA

IC DRAM 288MBIT PARALLEL 144FBGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT49H8M36SJ-25E:BTR-ND MT49H8M36SJ-25E:B TR MT49H8M36SJ-25E:B TR MT49H8M36SJ-25E:B TR
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
Density 288000 kbits 288000 kbits 288000 kbits 288000 kbits
Package Type 144-TFBGA BGA; 144-TFBGA
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