Micron Technology, Inc. Memory MT49H8M36BM-33 IT:B TR

Description
DRAM Memory IC 288Mbit Parallel 300 MHz 20 ns 144-µBGA (18.5x11)
Datasheet
Description
DRAM Memory IC 288Mbit Parallel 300 MHz 20 ns 144-µBGA (18.5x11)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
DRAM Memory IC 288Mbit Parallel 300 MHz 20 ns 144-µBGA (18.5x11)

DRAM Memory IC 288Mbit Parallel 300 MHz 20 ns 144-µBGA (18.5x11)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT49H8M36BM-33 IT:B TR
Integrated Circuits (ICs) - Memory - Memory MT49H8M36BM-33 IT:B TR
IC DRAM 288MBIT PARALLEL 144UBGA

IC DRAM 288MBIT PARALLEL 144UBGA

Supplier's Site
IC DRAM 288MBIT PARALLEL 144UBGA

IC DRAM 288MBIT PARALLEL 144UBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT49H8M36BM-33 IT:B TR MT49H8M36BM-33 IT:B TR MT49H8M36BM-33 IT:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 20 ns 20 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 288000 kbits 288000 kbits 288000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 16-3745-01 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
 - 27S19ADM/B - Rochester Electronics
Rochester Electronics
Specs
Memory Category PROM
Density 0 kbits
Package Type DIP; CDIP16
View Details
4 suppliers
Memory - AS29LV016J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 50 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Controllers - DP8422ATV-25 - Quarktwin Technology Ltd.
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 84-LCC (J-Lead)
Supply Voltage 4.5V ~ 5.5V
View Details