Micron Technology, Inc. Memory MT49H8M36BM-25E:B TR

Description
DRAM Memory IC 288Mbit Parallel 400 MHz 15 ns 144-µBGA (18.5x11)
Datasheet
Description
DRAM Memory IC 288Mbit Parallel 400 MHz 15 ns 144-µBGA (18.5x11)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT49H8M36BM-25E:B TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
DRAM Memory IC 288Mbit Parallel 400 MHz 15 ns 144-µBGA (18.5x11)

DRAM Memory IC 288Mbit Parallel 400 MHz 15 ns 144-µBGA (18.5x11)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT49H8M36BM-25E:B TR
Integrated Circuits (ICs) - Memory - Memory MT49H8M36BM-25E:B TR
IC DRAM 288MBIT PARALLEL 144UBGA

IC DRAM 288MBIT PARALLEL 144UBGA

Supplier's Site
IC DRAM 288MBIT PARALLEL 144UBGA

IC DRAM 288MBIT PARALLEL 144UBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT49H8M36BM-25E:B TR MT49H8M36BM-25E:B TR MT49H8M36BM-25E:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 15 ns 15 ns
Operating Temperature 0 to 95 C (32 to 203 F)
Density 288000 kbits 288000 kbits 288000 kbits
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