Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT49H64M9FM-25:B TR

Description
IC DRAM 576MBIT PARALLEL 144UBGA
Datasheet
Description
IC DRAM 576MBIT PARALLEL 144UBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT49H64M9FM-25:B TR
Integrated Circuits (ICs) - Memory - Memory MT49H64M9FM-25:B TR
IC DRAM 576MBIT PARALLEL 144UBGA

IC DRAM 576MBIT PARALLEL 144UBGA

Supplier's Site
IC DRAM 576MBIT PARALLEL 144UBGA

IC DRAM 576MBIT PARALLEL 144UBGA

Supplier's Site Datasheet
Memory - MT49H64M9FM-25:B TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
DRAM Memory IC 576Mbit Parallel 400 MHz 20 ns 144-µBGA (18.5x11)

DRAM Memory IC 576Mbit Parallel 400 MHz 20 ns 144-µBGA (18.5x11)

Buy Now Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT49H64M9FM-25:B TR MT49H64M9FM-25:B TR MT49H64M9FM-25:B TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 400 MHz
Density 576000 kbits 576000 kbits 576000 kbits
Package Type BGA BGA; 144-TFBGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 16-4369-01-T - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - 5962-9459901MXA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category NVSRAM; SRAM Chip
Access Time 55 ns
Density 64 kbits
View Details
Memory - NM24C09N - 1231761-NM24C09N - Win Source Electronics
Specs
Memory Category EEPROM
View Details
Flash Memory - 1882551 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details