Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT49H64M9CBM-25E:B

Description
IC DRAM 576MBIT PARALLEL 144UBGA
Datasheet
Description
IC DRAM 576MBIT PARALLEL 144UBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT49H64M9CBM-25E:B
Integrated Circuits (ICs) - Memory - Memory MT49H64M9CBM-25E:B
IC DRAM 576MBIT PARALLEL 144UBGA

IC DRAM 576MBIT PARALLEL 144UBGA

Supplier's Site
Memory - MT49H64M9CBM-25E:B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
DRAM Memory IC 576Mbit Parallel 400 MHz 15 ns 144-µBGA (18.5x11)

DRAM Memory IC 576Mbit Parallel 400 MHz 15 ns 144-µBGA (18.5x11)

Buy Now Datasheet
IC DRAM 576MBIT PARALLEL 144UBGA

IC DRAM 576MBIT PARALLEL 144UBGA

Supplier's Site Datasheet

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT49H64M9CBM-25E:B MT49H64M9CBM-25E:B MT49H64M9CBM-25E:B
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 400 MHz
Density 576000 kbits 576000 kbits 576000 kbits
Package Type BGA BGA; 144-TFBGA
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