DRAM Memory IC 576Mbit Parallel 400 MHz 15 ns 144-µBGA (18.5x11)
IC DRAM 576MBIT PARALLEL 144UBGA
IC DRAM 576MBIT PARALLEL 144UBGA
| Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | |
|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT49H64M9CBM-25E:B | MT49H64M9CBM-25E:B | MT49H64M9CBM-25E:B |
| Product Name | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 15 ns | 15 ns | |
| Operating Temperature | 0 to 95 C (32 to 203 F) | ||
| Density | 576000 kbits | 576000 kbits | 576000 kbits |
