Micron Technology, Inc. Memory MT49H64M9CBM-25E:B

Description
IC DRAM 576MBIT PARALLEL 144UBGA
Datasheet
Description
IC DRAM 576MBIT PARALLEL 144UBGA
Datasheet

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Product
Description
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IC DRAM 576MBIT PARALLEL 144UBGA

IC DRAM 576MBIT PARALLEL 144UBGA

Supplier's Site Datasheet
Memory - MT49H64M9CBM-25E:B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
DRAM Memory IC 576Mbit Parallel 400 MHz 15 ns 144-µBGA (18.5x11)

DRAM Memory IC 576Mbit Parallel 400 MHz 15 ns 144-µBGA (18.5x11)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT49H64M9CBM-25E:B
Integrated Circuits (ICs) - Memory - Memory MT49H64M9CBM-25E:B
IC DRAM 576MBIT PARALLEL 144UBGA

IC DRAM 576MBIT PARALLEL 144UBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT49H64M9CBM-25E:B MT49H64M9CBM-25E:B MT49H64M9CBM-25E:B
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 15 ns 15 ns
Density 576000 kbits 576000 kbits 576000 kbits
Operating Temperature 0 to 95 C (32 to 203 F)
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