The MT49H32M9FM-25:B is a 288Mbit CIO RLDRAM 2 memory device from Quarktwin Technology Ltd. It operates at a clock frequency of 533 MHz, providing a data rate of 1.067 Gb/s per pin and a peak bandwidth of 38.4 Gb/s when configured as x36. The memory is organized as 32 Meg x 9 and features eight internal banks for concurrent operations, which maximizes bandwidth efficiency. This device supports a reduced cycle time of 15ns and offers programmable read latency, row cycle time, and burst sequence length. It utilizes a SRAM-type interface with differential input clocks and includes on-die termination for improved signal integrity. The memory operates at a nominal I/O voltage of 1.5V or 1.8V and is available in various package options, including 144-ball µBGA and FBGA configurations. The MT49H32M9FM-25:B is suitable for applications requiring high-speed memory with efficient data handling capabilities, making it a potential choice for engineers looking to enhance system performance in their projects.
Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting Style: SMD
Technology: DRAM
Memory Type: Volatile
Memory Size: 288Mb (32M x 9)
Access Time: 20ns
Supplier Device Package: 144-μBGA (18.5x11)
Temperature Range - Operating: 0°C ~ 95°C (TC)
Memory Format: DRAM
Clock Frequency: 400MHz
Memory Interface: Parallel
Manufacturer Package: 144-TFBGA
Popularity: Low
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.9V
IC DRAM 288MBIT PARALLEL 144UBGA Product overview: MT49H32M9FM-25:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT49H32M9FM-25:B
DRAM Memory IC 288Mbit Parallel 400 MHz 20 ns 144-µBGA (18.5x11)
IC DRAM 288MBIT PARALLEL 144UBGA
IC DRAM 288MBIT PARALLEL 144UBGA
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT49H32M9FM-25:B | MT49H32M9FM-25:B | MT49H32M9FM-25:B | MT49H32M9FM-25:B | |
| Product Name | Memory - SDRAM - MT49H32M9FM-25:B | Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Access Time | 20 ns | 20 ns | 20 ns | 20 ns | |
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | ||
| Supply Voltage | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 0degC ~ 95degC (TC) |
