Micron Technology, Inc. Memory MT49H32M9BM-33:B TR

Description
DRAM Memory IC 288Mbit Parallel 300 MHz 20 ns 144-µBGA (18.5x11)
Datasheet
Description
DRAM Memory IC 288Mbit Parallel 300 MHz 20 ns 144-µBGA (18.5x11)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT49H32M9BM-33:B TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
DRAM Memory IC 288Mbit Parallel 300 MHz 20 ns 144-µBGA (18.5x11)

DRAM Memory IC 288Mbit Parallel 300 MHz 20 ns 144-µBGA (18.5x11)

Buy Now Datasheet
IC DRAM 288MBIT PARALLEL 144UBGA

IC DRAM 288MBIT PARALLEL 144UBGA

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT49H32M9BM-33:B TR
Integrated Circuits (ICs) - Memory - Memory MT49H32M9BM-33:B TR
IC DRAM 288MBIT PARALLEL 144UBGA

IC DRAM 288MBIT PARALLEL 144UBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT49H32M9BM-33:B TR MT49H32M9BM-33:B TR MT49H32M9BM-33:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 20 ns 20 ns
Operating Temperature 0 to 95 C (32 to 203 F)
Density 288000 kbits 288000 kbits 288000 kbits
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