DRAM Memory IC 576Mb (32M x 18) Parallel 400MHz 15ns 144-FBGA (18.5x11)
IC DRAM 576MBIT PARALLEL 144FBGA Product overview: MT49H32M18SJ-25E:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT49H32M18SJ-25E
Manufacturer: Micron Technology Inc.
Operating Temperature Range: 0°C ~ 95°C (TC)
Features: DRAM Memory IC 576Mb (32M x 18) Parallel 400 MHz 15 ns 144-FBGA (18.5x11)
Package: 144-TFBGA
Package: Tray
Mounting: Surface Mount
Family Name: MT49H32M18
Categories: Integrated Circuits (ICs)
Case / Package: 144-FBGA (18.5x11)
ECCN: 3A991B2A
Popularity: Medium
Fake Threat In the Open Market: 85 pct.
Supply and Demand Status: Limited
Quantity per package: 1120
MSL Level: 3 (168 Hours)
Estimated Pruduction Lead Time: 35 Weeks
REACH Status: REACH Unaffected
HTSUS: 8542.32.0028
IC DRAM 576MBIT PARALLEL 144FBGA
DRAM Memory IC 576Mbit Parallel 400 MHz 15 ns 144-FBGA (18.5x11)
IC DRAM 576MBIT PARALLEL 144FBGA
IC DRAM 576MBIT PARALLEL 144FBGA
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Lingto Electronic Limited | Quarktwin Technology Ltd. | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT49H32M18SJ-25E:B-ND | 774-MT49H32M18SJ-25E:B | MT49H32M18SJ-25E:B | MT49H32M18SJ-25E:B | MT49H32M18SJ-25E:B | MT49H32M18SJ-25E:B | |
| Product Name | Memory | Memory IC and Storage Component | Memory - SDRAM - MT49H32M18SJ-25E:B | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip |
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | ||
| Density | 576000 kbits | 576000 kbits | 576000 kbits | 576000 kbits | 576000 kbits | ||
| Package Type | 144-TFBGA | BGA; Tray | BGA; 144-FBGA (18.5x11) | BGA; 144-TFBGA | 144-TFBGA |
