Micron Technology, Inc. Memory MT49H32M18BM-33:B TR

Description
IC DRAM 576MBIT PARALLEL 144UBGA
Datasheet
Description
IC DRAM 576MBIT PARALLEL 144UBGA
Datasheet

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IC DRAM 576MBIT PARALLEL 144UBGA

IC DRAM 576MBIT PARALLEL 144UBGA

Supplier's Site Datasheet
Memory - MT49H32M18BM-33:B TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
DRAM Memory IC 576Mbit Parallel 300 MHz 20 ns 144-µBGA (18.5x11)

DRAM Memory IC 576Mbit Parallel 300 MHz 20 ns 144-µBGA (18.5x11)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT49H32M18BM-33:B TR
Integrated Circuits (ICs) - Memory - Memory MT49H32M18BM-33:B TR
IC DRAM 576MBIT PARALLEL 144UBGA

IC DRAM 576MBIT PARALLEL 144UBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT49H32M18BM-33:B TR MT49H32M18BM-33:B TR MT49H32M18BM-33:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 20 ns 20 ns
Density 576000 kbits 576000 kbits 576000 kbits
Operating Temperature 0 to 95 C (32 to 203 F)
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