IC DRAM 576MBIT PARALLEL 144FBGA Product overview: MT49H16M36SJ-25E:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT49H16M36SJ-25E
IC DRAM 576MBIT PARALLEL 144FBGA
DRAM Memory IC 576Mb (16M x 36) Parallel 400MHz 15ns 144-FBGA (18.5x11)
Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting Style: SMD
Technology: DRAM
Memory Type: Volatile
Memory Size: 576Mb (16M x 36)
Access Time: 15ns
Family Name: MT49H16M36
Categories: Integrated Circuits
Supplier Device Package: 144-FBGA (18.5x11)
Temperature Range - Operating: 0°C ~ 95°C
Memory Format: DRAM
Clock Frequency: 400MHz
Memory Interface: Parallel
Manufacturer Package: 144-TFBGA
Introduction Date: September 14, 2015
ECCN: EAR99
Estimated EOL Date: 2024
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,120
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.9V
IC DRAM 576MBIT PARALLEL 144FBGA
DRAM, 16M X 36BIT, 0 TO 95DEG C; DRAM Type:DDR; DRAM Density:576Mbit; DRAM Memory Configuration:16M x 36bit; Clock Frequency:400MHz; Memory Case Style:TFBGA; No. of Pins:144Pins; Supply Voltage Nom:1.8V; Access Time:2.5ns RoHS Compliant: Yes
IC DRAM 576MBIT PARALLEL 144FBGA
DRAM Memory IC 576Mbit Parallel 400 MHz 15 ns 144-FBGA (18.5x11)
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Lingto Electronic Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT49H16M36SJ-25E:B | MT49H16M36SJ-25E:B | MT49H16M36SJ-25E:B-ND | MT49H16M36SJ-25E:B | 80AH8176 | MT49H16M36SJ-25E:B | MT49H16M36SJ-25E:B | |
| Product Name | Memory IC and Storage Component | Memory | Memory | Memory - SDRAM - MT49H16M36SJ-25E:B | Memory | Dram, 16M X 36Bit, 0 To 95Deg C; Dram Type Micron | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 15 ns | 15 ns | 15 ns | 15 ns | 2.5 ns | 15 ns | ||
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | |||
| Density | 576000 kbits | 576000 kbits | 576000 kbits | 576000 kbits | 576000 kbits | 576000 kbits | 576000 kbits | |
| Number of Words | 2000 k |
