Manufacturer: Micron Technology Inc.
Packaging: Bulk
Mounting Style: SMD
Technology: DRAM
Memory Type: Volatile
Memory Size: 288Mb (16M x 18)
Access Time: 20ns
Part Status: Obsolete (End Of Life)
Supplier Device Package: 144-FBGA (18.5x11)
Temperature Range - Operating: 0°C ~ 95°C (TC)
Memory Format: DRAM
Clock Frequency: 400MHz
Memory Interface: Parallel
Manufacturer Package: 144-TBGA
Popularity: Low
Fake Threat In the Open Market: 80 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 3 (168 Hours)
Supply Voltage (V): 1.7V ~ 1.9V
Part Number Series: MT49H16M18
IC DRAM 288MBIT PARALLEL 144FBGA Product overview: MT49H16M18SJ-25:B from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT49H16M18SJ-25:
DRAM Memory IC 288Mb (16M x 18) Parallel 400MHz 20ns 144-FBGA (18.5x11)
DRAM Memory IC 288Mbit Parallel 400 MHz 20 ns 144-FBGA (18.5x11)
IC DRAM 288MBIT PARALLEL 144FBGA
DRAM, 16M X 18BIT, 0 TO 95DEG C; DRAM Type:DDR; DRAM Density:288Mbit; DRAM Memory Configuration:16M x 18bit; Clock Frequency:400MHz; Memory Case Style:TFBGA; No. of Pins:144Pins; Supply Voltage Nom:1.8V; Access Time:2.5ns RoHS Compliant: Yes
IC DRAM 288MBIT PARALLEL 144FBGA
IC DRAM 288MBIT PARALLEL 144FBGA
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | ODG (Origin Data Global) | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT49H16M18SJ-25:B | 557-1587-ND | MT49H16M18SJ-25:B | MT49H16M18SJ-25:B | 80AH8173 | MT49H16M18SJ-25:B | MT49H16M18SJ-25:B | |
| Product Name | Memory - SDRAM - MT49H16M18SJ-25:B | Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Dram, 16M X 18Bit, 0 To 95Deg C; Dram Type Micron | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 20 ns | 20 ns | 20 ns | 2.5 ns | 20 ns | 20 ns | ||
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | |||
| Supply Voltage | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 1.7V ~ 1.9V | 0degC ~ 95degC (TC) | 1.7V ~ 1.9V | ||
| Density | 288000 kbits | 288000 kbits | 288000 kbits | 288000 kbits | 288000 kbits | 288000 kbits | 288000 kbits |
