Micron Technology, Inc. Memory MT49H16M18CTR-25:B

Description
IC DRAM 288MBIT PARALLEL 400MHZ
Datasheet
Description
IC DRAM 288MBIT PARALLEL 400MHZ
Datasheet

Suppliers

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Product
Description
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IC DRAM 288MBIT PARALLEL 400MHZ

IC DRAM 288MBIT PARALLEL 400MHZ

Supplier's Site Datasheet
Memory - MT49H16M18CTR-25:B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
DRAM Memory IC 288Mbit Parallel 400 MHz 20 ns

DRAM Memory IC 288Mbit Parallel 400 MHz 20 ns

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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
MT49H16M18CTR-25:B
Integrated Circuits (ICs) - Memory - Memory MT49H16M18CTR-25:B
IC DRAM 288MBIT PARALLEL 400MHZ

IC DRAM 288MBIT PARALLEL 400MHZ

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT49H16M18CTR-25:B MT49H16M18CTR-25:B MT49H16M18CTR-25:B
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 20 ns 20 ns
Density 288000 kbits 288000 kbits 288000 kbits
Operating Temperature 0 to 95 C (32 to 203 F)
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