Micron Technology, Inc. Memory MT49H16M18CTR-25:B

Description
DRAM Memory IC 288Mbit Parallel 400 MHz 20 ns
Datasheet
Description
DRAM Memory IC 288Mbit Parallel 400 MHz 20 ns
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT49H16M18CTR-25:B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
DRAM Memory IC 288Mbit Parallel 400 MHz 20 ns

DRAM Memory IC 288Mbit Parallel 400 MHz 20 ns

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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
MT49H16M18CTR-25:B
Integrated Circuits (ICs) - Memory - Memory MT49H16M18CTR-25:B
IC DRAM 288MBIT PARALLEL 400MHZ

IC DRAM 288MBIT PARALLEL 400MHZ

Supplier's Site
IC DRAM 288MBIT PARALLEL 400MHZ

IC DRAM 288MBIT PARALLEL 400MHZ

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Acme Chip Technology Co., Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT49H16M18CTR-25:B MT49H16M18CTR-25:B MT49H16M18CTR-25:B
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Access Time 20 ns 20 ns
Operating Temperature 0 to 95 C (32 to 203 F)
Density 288000 kbits 288000 kbits 288000 kbits
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