Micron Technology, Inc. Memory MT49H16M18CBM-25:B

Description
IC DRAM 288MBIT PARALLEL 144UBGA
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Description
IC DRAM 288MBIT PARALLEL 144UBGA
Request a Quote Datasheet

Suppliers

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Product
Description
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IC DRAM 288MBIT PARALLEL 144UBGA

IC DRAM 288MBIT PARALLEL 144UBGA

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT49H16M18CBM-25:B
Integrated Circuits (ICs) - Memory - Memory MT49H16M18CBM-25:B
IC DRAM 288MBIT PARALLEL 144UBGA

IC DRAM 288MBIT PARALLEL 144UBGA

Supplier's Site
Memory - MT49H16M18CBM-25:B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
DRAM Memory IC 288Mbit Parallel 400 MHz 20 ns 144-µBGA (18.5x11)

DRAM Memory IC 288Mbit Parallel 400 MHz 20 ns 144-µBGA (18.5x11)

Buy Now Datasheet
IC DRAM 288MBIT PARALLEL 144UBGA

IC DRAM 288MBIT PARALLEL 144UBGA

Supplier's Site Datasheet

Technical Specifications

  ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT49H16M18CBM-25:B MT49H16M18CBM-25:B MT49H16M18CBM-25:B MT49H16M18CBM-25:B
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 400 MHz 400 MHz
Access Time 20 ns 20 ns 20 ns
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
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