Micron Technology, Inc. Memory MT49H16M18CBM-25:B

Description
IC DRAM 288MBIT PARALLEL 144UBGA
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Description
IC DRAM 288MBIT PARALLEL 144UBGA
Request a Quote Datasheet

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Product
Description
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IC DRAM 288MBIT PARALLEL 144UBGA

IC DRAM 288MBIT PARALLEL 144UBGA

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT49H16M18CBM-25:B
Integrated Circuits (ICs) - Memory - Memory MT49H16M18CBM-25:B
IC DRAM 288MBIT PARALLEL 144UBGA

IC DRAM 288MBIT PARALLEL 144UBGA

Supplier's Site
IC DRAM 288MBIT PARALLEL 144UBGA

IC DRAM 288MBIT PARALLEL 144UBGA

Supplier's Site Datasheet
Memory - MT49H16M18CBM-25:B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
DRAM Memory IC 288Mbit Parallel 400 MHz 20 ns 144-µBGA (18.5x11)

DRAM Memory IC 288Mbit Parallel 400 MHz 20 ns 144-µBGA (18.5x11)

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Technical Specifications

  ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT49H16M18CBM-25:B MT49H16M18CBM-25:B MT49H16M18CBM-25:B MT49H16M18CBM-25:B
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 400 MHz 400 MHz
Access Time 20 ns 20 ns 20 ns
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
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