Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT48V8M32LFF5-10 IT

Description
IC DRAM 256MBIT PAR 90VFBGA
Description
IC DRAM 256MBIT PAR 90VFBGA

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - MT48V8M32LFF5-10 IT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT48V8M32LFF5-10 IT
Integrated Circuits (ICs) - Memory - Memory MT48V8M32LFF5-10 IT
IC DRAM 256MBIT PAR 90VFBGA

IC DRAM 256MBIT PAR 90VFBGA

Supplier's Site
IC DRAM 256MBIT PARALLEL 90VFBGA

IC DRAM 256MBIT PARALLEL 90VFBGA

Supplier's Site
Memory - MT48V8M32LFF5-10 IT - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPSDR Memory IC 256Mbit Parallel 100 MHz 7 ns 90-VFBGA (8x13)

SDRAM - Mobile LPSDR Memory IC 256Mbit Parallel 100 MHz 7 ns 90-VFBGA (8x13)

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT48V8M32LFF5-10 IT MT48V8M32LFF5-10 IT MT48V8M32LFF5-10 IT
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 100 MHz
Cycle Time 15 ns
Density 256000 kbits 256000 kbits 256000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 28037126 A - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - 6116SA20SOI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 16 kbits
View Details
Memory - AS28F128J3A - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 115 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details