Micron Technology, Inc. Memory MT48V8M16LFF4-8:G TR

Description
SDRAM - Mobile LPSDR Memory IC 128Mbit Parallel 125 MHz 7 ns 54-VFBGA (8x8)
Description
SDRAM - Mobile LPSDR Memory IC 128Mbit Parallel 125 MHz 7 ns 54-VFBGA (8x8)
Datasheet
Datasheet Summary
Powered by GS/AI

The MT48V8M16LFF4-8:G TR is a 128Mb Mobile SDRAM memory device featuring a x16 configuration. It operates at a voltage of 2.5V to 1.8V and supports a clock frequency of up to 125 MHz with a cycle time of 8ns at CL = 3. The device is available in a 54-ball VFBGA package measuring 8mm x 8mm and is designed for low power consumption, making it suitable for mobile applications. This memory chip includes features such as temperature-compensated self-refresh, fully synchronous operation, and programmable burst lengths of 1, 2, 4, 8, or full page. It supports auto precharge and self-refresh modes, along with a 4K refresh count. The operating temperature range for this part is from -40¬8C to +85¬8C, which is suitable for industrial applications. Engineers considering this product should note its compatibility with LVTTL inputs and outputs, as well as its low voltage power supply requirements, which can enhance power efficiency in designs.

Datasheet Summary
Powered by GS/AI

The MT48V8M16LFF4-8:G TR is a 128Mb Mobile SDRAM memory device featuring a x16 configuration. It operates at a voltage of 2.5V to 1.8V and supports a clock frequency of up to 125 MHz with a cycle time of 8ns at CL = 3. The device is available in a 54-ball VFBGA package measuring 8mm x 8mm and is designed for low power consumption, making it suitable for mobile applications. This memory chip includes features such as temperature-compensated self-refresh, fully synchronous operation, and programmable burst lengths of 1, 2, 4, 8, or full page. It supports auto precharge and self-refresh modes, along with a 4K refresh count. The operating temperature range for this part is from -40¬8C to +85¬8C, which is suitable for industrial applications. Engineers considering this product should note its compatibility with LVTTL inputs and outputs, as well as its low voltage power supply requirements, which can enhance power efficiency in designs.

Suppliers

Company
Product
Description
Supplier Links
Memory - MT48V8M16LFF4-8:G TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - Mobile LPSDR Memory IC 128Mbit Parallel 125 MHz 7 ns 54-VFBGA (8x8)

SDRAM - Mobile LPSDR Memory IC 128Mbit Parallel 125 MHz 7 ns 54-VFBGA (8x8)

Buy Now Datasheet
IC DRAM 128MBIT PARALLEL 54VFBGA

IC DRAM 128MBIT PARALLEL 54VFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number MT48V8M16LFF4-8:G TR MT48V8M16LFF4-8:G TR
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 7 ns 7 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - A2C00051189 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Flash Memory - 1712234P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 64000 kbits
Package Type SOIC; SOIC
View Details