IC DRAM 128MBIT PAR 54TSOP II
SDRAM Memory IC 128Mb (8M x 16) Parallel 167MHz 5.4ns 54-TSOP II
IC DRAM 128MBIT PAR 54TSOP II Product overview: MT48LC8M16A2P-6A:L from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT48LC8M16A2P-6A
Manufacturer: Micron Technology Inc.
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: SDRAM
Memory Type: Volatile
Memory Size: 128Mb (8M x 16)
Access Time: 5.4ns
Family Name: MT48LC8M16A2
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 54-TSOP II
Supply Voltage - Operating: 3 V to 3.6 V
Memory Format: DRAM
Max Frequency: 167MHz
Alternative Parts (Cross-Reference): PT480816KHGI-6; M12L128168A-6TIG2N; AS4C8M16SA-6TIN;
Introduction Date: July 21, 2000
ECCN: EAR99
Country of Origin: Taiwan, United States of America
Estimated EOL Date: 2022
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Balance
IC DRAM 128MBIT PAR 54TSOP II
DRAM, 8M X 16BIT, 0 TO 70DEG C; DRAM Type:SDR; DRAM Density:128Mbit; DRAM Memory Configuration:8M x 16bit; Clock Frequency:166MHz; Memory Case Style:TSOP; No. of Pins:54Pins; Supply Voltage Nom:3.3V; Access Time:6ns; Product Range:- RoHS Compliant: Yes
DRAM, SDR, 128MBIT, 0 TO 70DEG C ROHS COMPLIANT: YES
SDRAM Memory IC 128Mbit Parallel 167 MHz 5.4 ns 54-TSOP II
IC DRAM 128MBIT PAR 54TSOP II
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT48LC8M16A2P-6A:L | MT48LC8M16A2P-6A:L-ND | 774-MT48LC8M16A2P-6A:L | MT48LC8M16A2P-6A:L | 80AH8172 | 91AH7967 | MT48LC8M16A2P-6A:L | MT48LC8M16A2P-6A:L | |
| Product Name | Memory | Memory | Memory IC and Storage Component | Memory - SDRAM - MT48LC8M16A2P-6A:L | Integrated Circuits (ICs) - Memory - Memory | Dram, 8M X 16Bit, 0 To 70Deg C; Dram Type Micron | Dram, Sdr, 128Mbit, 0 To 70Deg C Rohs Compliant Micron | Memory | Memory |
| Memory Category | SDRAM; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Data Rate | 167 MHz | 167 MHz | 166 MHz | ||||||
| Access Time | 5.4 ns | 5.4 ns | 5.4 ns | 6 ns | 5.4 ns | 5.4 ns | |||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||||
| Density | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits | 128000 kbits |
