Micron Technology, Inc. Memory MT48LC4M16A2P-7E:G

Description
SDRAM Memory IC 64Mb (4M x 16) Parallel 133MHz 5.4ns 54-TSOP II
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Description
SDRAM Memory IC 64Mb (4M x 16) Parallel 133MHz 5.4ns 54-TSOP II
Request a Quote
Datasheet
Datasheet Summary
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The MT48LC4M16A2P-7E:G is a 64Mb synchronous DRAM memory chip from Quarktwin Technology Ltd., designed for high-speed applications. It operates at a voltage of +3.3V ±0.3V and is compliant with PC66, PC100, and PC133 standards. The memory is organized as 4 Meg x 16 across four internal banks, allowing for efficient data access and management. This memory chip supports fully synchronous operation, with all signals registered on the positive edge of the system clock. It features programmable burst lengths of 1, 2, 4, 8, or full page, and includes auto precharge and self-refresh modes, enhancing its performance in various applications. The device also supports a 64ms, 4,096-cycle refresh rate, making it suitable for applications requiring reliable data retention. The MT48LC4M16A2P-7E:G is packaged in a 54-pin TSOP II format, which is compact and suitable for space-constrained designs. Its timing specifications include a cycle time of 7.5ns at CL=2 and 5.4ns at CL=3, making it a viable option for systems that demand high-speed memory access. This product is ideal for engineers looking for a reliable and efficient memory solution for their projects.

Datasheet Summary
Powered by GS/AI

The MT48LC4M16A2P-7E:G is a 64Mb synchronous DRAM memory chip from Quarktwin Technology Ltd., designed for high-speed applications. It operates at a voltage of +3.3V ±0.3V and is compliant with PC66, PC100, and PC133 standards. The memory is organized as 4 Meg x 16 across four internal banks, allowing for efficient data access and management. This memory chip supports fully synchronous operation, with all signals registered on the positive edge of the system clock. It features programmable burst lengths of 1, 2, 4, 8, or full page, and includes auto precharge and self-refresh modes, enhancing its performance in various applications. The device also supports a 64ms, 4,096-cycle refresh rate, making it suitable for applications requiring reliable data retention. The MT48LC4M16A2P-7E:G is packaged in a 54-pin TSOP II format, which is compact and suitable for space-constrained designs. Its timing specifications include a cycle time of 7.5ns at CL=2 and 5.4ns at CL=3, making it a viable option for systems that demand high-speed memory access. This product is ideal for engineers looking for a reliable and efficient memory solution for their projects.

Suppliers

Company
Product
Description
Supplier Links
Memory - MT48LC4M16A2P-7E:G-ND - DigiKey
Thief River Falls, MN, United States
SDRAM Memory IC 64Mb (4M x 16) Parallel 133MHz 5.4ns 54-TSOP II

SDRAM Memory IC 64Mb (4M x 16) Parallel 133MHz 5.4ns 54-TSOP II

Buy Now Datasheet
Memory IC and Storage Component - 774-MT48LC4M16A2P-7E:G - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT48LC4M16A2P-7E:G
Memory IC and Storage Component 774-MT48LC4M16A2P-7E:G
IC DRAM 64MBIT PAR 54TSOP II Product overview: MT48LC4M16A2P-7E:G from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT48LC4M16A2P-7E :G can be used for catalog matching and distributor lookup.

IC DRAM 64MBIT PAR 54TSOP II Product overview: MT48LC4M16A2P-7E:G from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT48LC4M16A2P-7E:G can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - SDRAM - MT48LC4M16A2P-7E:G -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - SDRAM - MT48LC4M16A2P-7E:G
Memory - SDRAM - MT48LC4M16A2P-7E:G
Manufacturer: Micron Technology Inc. Packaging: Tray Mounting Style: SMD Technology: SDRAM Memory Type: Volatile Memory Size: 64Mb (4M x 16) Access Time: 5.4ns Family Name: MT48LC4M16A2 Categories: Integrated Circuits Supplier Device Package: 54-TSOP II Status: Obsolete Temperature Range - Operating: 0°C ~ 70°C Memory Format: DRAM Clock Frequency: 133MHz Write Cycle Time - Word, Page: 14ns Memory Interface: Parallel Manufacturer Package: 54-TSOP Alternative Parts (Cross-Reference): K4S641632F-LL70; IS42S16400-8TLI; HYB39S64160ET-7.5; Introduction Date: February 05, 2001 ECCN: EAR99 Estimated EOL Date: Obsolete Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Family Part Number: MT48LC4M16A2 Manufacturer Pack Quantity: 1,000 MSL Level: 3 (168 Hours) Supply Voltage (V): 3V ~ 3.6V

Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting Style: SMD
Technology: SDRAM
Memory Type: Volatile
Memory Size: 64Mb (4M x 16)
Access Time: 5.4ns
Family Name: MT48LC4M16A2
Categories: Integrated Circuits
Supplier Device Package: 54-TSOP II
Status: Obsolete
Temperature Range - Operating: 0°C ~ 70°C
Memory Format: DRAM
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 14ns
Memory Interface: Parallel
Manufacturer Package: 54-TSOP
Alternative Parts (Cross-Reference): K4S641632F-LL70; IS42S16400-8TLI; HYB39S64160ET-7.5;
Introduction Date: February 05, 2001
ECCN: EAR99
Estimated EOL Date: Obsolete
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Family Part Number: MT48LC4M16A2
Manufacturer Pack Quantity: 1,000
MSL Level: 3 (168 Hours)
Supply Voltage (V): 3V ~ 3.6V

Buy Now Datasheet
IC DRAM 64MBIT PAR 54TSOP II

IC DRAM 64MBIT PAR 54TSOP II

Supplier's Site Datasheet
IC DRAM 64MBIT PAR 54TSOP II

IC DRAM 64MBIT PAR 54TSOP II

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT48LC4M16A2P-7E:G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT48LC4M16A2P-7E:G
Integrated Circuits (ICs) - Memory - Memory MT48LC4M16A2P-7E:G
IC DRAM 64MBIT PAR 54TSOP II

IC DRAM 64MBIT PAR 54TSOP II

Supplier's Site
Memory - MT48LC4M16A2P-7E:G - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM Memory IC 64Mbit Parallel 133 MHz 5.4 ns 54-TSOP II

SDRAM Memory IC 64Mbit Parallel 133 MHz 5.4 ns 54-TSOP II

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Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT48LC4M16A2P-7E:G-ND 774-MT48LC4M16A2P-7E:G MT48LC4M16A2P-7E:G MT48LC4M16A2P-7E:G MT48LC4M16A2P-7E:G MT48LC4M16A2P-7E:G
Product Name Memory Memory IC and Storage Component Memory - SDRAM - MT48LC4M16A2P-7E:G Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category DRAM Chip Volatile; DRAM Chip Volatile; DRAM Chip SDRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 64000 kbits 64000 kbits 64000 kbits 64000 kbits 64000 kbits
Package Type TSOP; "54-TSOP (0.400"", 10.16mm Width)" TSOP; Tray 54-TSOP (0.400", 10.16mm Width) 54-TSOP (0.400\", 10.16mm Width)
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