Micron Technology, Inc. Memory MT47H64M4BP-37E:B

Description
IC DRAM 256MBIT PARALLEL 60FBGA
Datasheet
Description
IC DRAM 256MBIT PARALLEL 60FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 256MBIT PARALLEL 60FBGA

IC DRAM 256MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Memory - MT47H64M4BP-37E:B - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 256Mbit Parallel 267 MHz 500 ps 60-FBGA (8x12)

SDRAM - DDR2 Memory IC 256Mbit Parallel 267 MHz 500 ps 60-FBGA (8x12)

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT47H64M4BP-37E:B MT47H64M4BP-37E:B
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 0.5000 ns 0.5000 ns
Density 256000 kbits 256000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962F1120101QXA - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category SRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 72000 kbits
View Details
2 suppliers
Memory - 0436A8ACLAA-4F - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 4.3 ns
Density 8000 kbits
View Details
TEXAS INSTRUMENTS CC2510F16RSP IC, TRX, 2.4GHZ, 16K FLASH, QFN36 - 815-CC2510F16RSP - Utmel Electronic Limited
Specs
Memory Category Flash
Logic Family CMOS
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
Flash Memory - 1882635P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type TSOP
Pins 48
View Details