Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT47H128M8CF-25E:M

Description
IC DRAM 1GBIT PARALLEL 60FBGA
Datasheet
Description
IC DRAM 1GBIT PARALLEL 60FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
MT47H128M8CF-25E:M
Integrated Circuits (ICs) - Memory - Memory MT47H128M8CF-25E:M
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site
Memory - MT47H128M8CF-25E:M - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 60-FBGA (8x10)

SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 60-FBGA (8x10)

Buy Now
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site Datasheet

Technical Specifications

  Acme Chip Technology Co., Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT47H128M8CF-25E:M MT47H128M8CF-25E:M MT47H128M8CF-25E:M
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Volatile; DRAM Chip DRAM; DRAM Chip DRAM; DRAM Chip
Data Rate 400 MHz
Cycle Time 15 ns
Density 1000000 kbits 1000000 kbits 1000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 40060204 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - AS8FLC2M32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882648P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 1024000 kbits
Package Type SOIC; SOIC
View Details