Micron Technology, Inc. Memory MT47H128M8CF-25E:M

Description
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 60-FBGA (8x10)
Datasheet
Description
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 60-FBGA (8x10)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT47H128M8CF-25E:M - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 60-FBGA (8x10)

SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 60-FBGA (8x10)

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IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
MT47H128M8CF-25E:M
Integrated Circuits (ICs) - Memory - Memory MT47H128M8CF-25E:M
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT47H128M8CF-25E:M MT47H128M8CF-25E:M MT47H128M8CF-25E:M
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.4000 ns 0.4000 ns
Operating Temperature 0 to 85 C (32 to 185 F)
Density 1000000 kbits 1000000 kbits 1000000 kbits
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