Micron Technology, Inc. Memory MT47H128M8CF-25E:M

Description
IC DRAM 1GBIT PARALLEL 60FBGA
Datasheet
Description
IC DRAM 1GBIT PARALLEL 60FBGA
Datasheet

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Product
Description
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IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Memory - MT47H128M8CF-25E:M - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 60-FBGA (8x10)

SDRAM - DDR2 Memory IC 1Gbit Parallel 400 MHz 400 ps 60-FBGA (8x10)

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Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
MT47H128M8CF-25E:M
Integrated Circuits (ICs) - Memory - Memory MT47H128M8CF-25E:M
IC DRAM 1GBIT PARALLEL 60FBGA

IC DRAM 1GBIT PARALLEL 60FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT47H128M8CF-25E:M MT47H128M8CF-25E:M MT47H128M8CF-25E:M
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 0.4000 ns 0.4000 ns
Density 1000000 kbits 1000000 kbits 1000000 kbits
Operating Temperature 0 to 85 C (32 to 185 F)
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