Micron Technology, Inc. Memory MT47H128M4CB-3:B TR

Description
IC DRAM 512MBIT PARALLEL 60FBGA
Datasheet
Description
IC DRAM 512MBIT PARALLEL 60FBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC DRAM 512MBIT PARALLEL 60FBGA

IC DRAM 512MBIT PARALLEL 60FBGA

Supplier's Site Datasheet
Memory - MT47H128M4CB-3:B TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR2 Memory IC 512Mbit Parallel 333 MHz 450 ps 60-FBGA

SDRAM - DDR2 Memory IC 512Mbit Parallel 333 MHz 450 ps 60-FBGA

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT47H128M4CB-3:B TR MT47H128M4CB-3:B TR
Product Name Memory Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip
Access Time 0.4500 ns 0.4500 ns
Density 512000 kbits 512000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

 - 27S33APC - Rochester Electronics
Specs
Memory Category PROM
Package Type DIP; PDIP24
View Details
2 suppliers
Memory - Controllers - BQ2201SN-NG4 - Lingto Electronic Limited
Specs
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; 8-SOIC
View Details
2 suppliers
Memory - SMJ44400 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details